PROPERTIES OF SURFACE PLASMON RESONANCE SENSORS WITH ITO LAYER
DOI:
https://doi.org/10.32851/tnv-tech.2022.3.4Keywords:
surface plasmon resonance, ITO, polytetrafluoroethyleneAbstract
As a result of studies of optical and electrical properties of SPR sensors with an additional ITO sublayer, the influence of this sublayer on the angular position of the plasmon resonance and on the value of the dielectric constant of the metal layer was determined. The following optical and electrical characteristics were studied: transmission spectra in the visible and near infrared wavelength range, resonant angle of refractometric characteristics, absolute dielectric constant of the corresponding nanostructure layers, volt-watt characteristics of ITO film, and temperature dependences of the angular position. The effectiveness of the film heater compared to the resistive volume heater was also studied. According to the results of numerical modeling of refractometric characteristics of SPR nanostructures "ITO-Au-PTFE" in the wavelength range from 500 to 1600 nm, it was found that increasing the thickness of ITO has little effect on the shift of the angular position of the resonance (0.4 angular sec / nm) , and increasing the thickness of the PTFE film significantly shifts it (0.33 deg./nm). Experimental studies have shown the effect of the presence of the ITO sublayer of optimal thickness, both on the angular position of the plasmon resonance and on the value of the dielectric constant of the plasmon excitation layer. The optimal thicknesses for the ITO (66 nm) and PTFE layers (from 10 nm to 40 nm) were determined. The average value of the apparent component of the absolute dielectric constant εаi decreased by 10% from 9,548 pF / m to 8,554 pF / m, which had a positive effect on the reduction of losses. The nonlinear dependence of the resonance angle on the nanostructure self-heating temperature was established: first the value of the resonance angle decreased, and then at 47 ° С the resonance angle increased, which indicates the change of optical constants of the SPR sensor sensing element layers. The conducted researches allow to improve the process of development of optoelectronic SPR devices and are perspective for research of semiconductor materials for nanoplasmonics.
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